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High Temperature Reverse Bias Test System

supported tests:
High Temperature Reverse Bias Test (HTRB)
High Temperature Gate Bias Test (HTGB)
High Humidity High Temperature Reverse Bias Test(H3TRB)

Overview of Equipment

The system performs time-dependent breakdown evaluation of power semiconductor insulating film under high-temperature, high-voltage stress conditions.
With high-accuracy measurement and product damage prevention functions, the system can be used for failure analysis during device development and reliability evaluation.
For leakage current measurement, a high voltage of up to 3000 V is applied to the power semiconductors, generally IGBTs, MOSFETs, and diodes.

[Main Features]
  • ①Two tests in just one chamber
    The system combines HTRB and HTGB test functions into one.
  • ②Highly accurate current measurement with device-specific current measurement circuit
    Current measurement is possible at both the drain (collector) and gate terminals for each device.
    This makes it possible to determine if a device has failed even when testing multiple devices simultaneously.
  • ③IV characteristic measurement with no need to change device connections
    To measure device characteristic changes over time, IV measurement is possible at any time before, during, or after the test.
  • ④Device damage reduction functions
    If a device fails under stress conditions, the generated current surge can result in damage to other devices.
    To minimize damage to samples, the system includes protective functions such as surge suppression and fast shutdown.
    These protective functions are also provided for each device to prevent other devices from being affected if any one device fails.
  • Inside chamber
  • DUT board(TO-220, TO-247, TO-3P, Compatible socket)
Main specifications

Please scroll horizontally to look at table below.

Stress voltage(DC) 100〜3000V, 0V (HTGB)
Gate voltage(DC) -30V〜+30V(option: -45V~+45V)
Number of channels maximum 48ch
Temperature range max 200℃(option: maximum 250℃)

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