High Temperature Reverse Bias Test System

supported tests：
High Temperature Reverse Bias Test (HTRB)
High Temperature Gate Bias Test (HTGB)
High Humidity High Temperature Reverse Bias Test(H3TRB)

Overview of Equipment

This system evaluates the time-dependent breakdown of insulating films in power semiconductors under high-temperature, high-humidity, and high-voltage stress conditions.
With high-precision measurement and device protection features, it supports failure analysis during device development and reliability testing.
Leakage current can be measured while applying up to 3000 V to power semiconductors such as SiC-MOSFETs, IGBTs, and diodes.

[Main Features]

HTR(G)B
H3TRB

①Three Test Modes in One System
A single system integrates HTRB, HTGB, and H3TRB testing capabilities—enabling versatile evaluation in one chamber.
②Highly accurate current measurement with device-specific current measurement circuit
Current measurement is possible at both the drain (collector) and gate terminals for each device.
This makes it possible to determine if a device has failed even when testing multiple devices simultaneously.
③IV Characteristic Measurement Without Rewiring
IV characteristics can be measured at any stage—before, during, or after testing—without the need for rewiring.
This enables efficient monitoring of performance degradation over time.
Three types of IV measurements are available:
- Vth (threshold voltage)
- On-resistance
- Breakdown voltage
④Device Protection Functions to Minimize Sample Damage
When a sample experiences insulation breakdown during testing, current surges may cause burnout, making post-test analysis difficult.
Such surges can also interfere with the testing of other samples being evaluated simultaneously.
To minimize these risks, the system is equipped with individual protection features—such as surge suppression and fast shutdown—for each sample.

HTR(G)B Inside chamber
H3TRB Inside chamber

DUT board
（TO-220, TO-247, TO-3P, Compatible socket）

Main specifications

Please scroll horizontally to look at table below.

	HTR(G)B	H3TRB
Stress Voltage (DC)	+100 to 3000 V DC (0 V for HTGB)
Gate Voltage (DC)	-30 to +30 V DC (option: -45 to +45 V)
Number of channels	Up to 48 channels (for temperature chambers)	Up to 48 channels (for temperature & humidity chambers)
Temperature range	Max. 200°C (option: up to 250°C)	85°C / 85% RH
IV measurement (option)	Vth, On-resistance, Breakdown voltage Please contact ESPEC for details.