High temperature reverse gate
bias test system
The system performs time-dependent breakdown
evaluation of power semiconductor insulating film.
This device is suited to time-dependent breakdown evaluation of the insulating film of power semiconductors under stress conditions due to high temperatures and high voltage.
With high-accuracy measurement and product damage prevention functions, the system can be used for failure analysis during device development and reliability evaluation.
For leakage current measurement, a high voltage of up to 3000 V is applied to the power semiconductors, generally IGBTs, MOSFETs, and diodes.
Test category
- Ids (leakage current) measurement via Vds application
- Ids (leakage current) measurement via gate voltage control and Vds application
- IV measurements
- High temperature gate bias test (HTGB)
- High humidity high temperature reverse bias Test(H3TRB)
Test devices
- IGBT
- MOSFET
- Diodes
- Power semiconductors such as GaN devices
Keywords
- HTRB Test
- High Temperature Gate Bias Test (HTGB)
- High Humidity High Temperature Reverse Bias Test(H3TRB)
- Power semiconductor
- High heating
- Large current
- Power devices
POINT 01Two tests in just one chamber
The system combines HTRB and HTGB test functions into one. ESPEC can accommodate H3TRB (High Humidity High Temperature Reverse Bias Test) on custom specifications.
POINT 02Highly accurate current measurement with device-specific current measurement circuit
Current measurement is possible at both the drain (collector) and gate terminals for each device.
This makes it possible to determine if a device has failed even when testing multiple devices simultaneously.
POINT 03IV characteristic measurement with no need to change device connections
IV measurements are possible at any time with the sample in the chamber, including before, during, and after testing. You can evaluate IV value temperature characteristics as device characteristic changes due to time degradation.
POINT 04Device damage reduction functions
To minimize damage to samples, the system includes protective functions such as surge suppression and fast shutdown.
These protective functions are provided for each device to prevent other devices from being affected if any one device fails.
Specifications
| Item | Specifications |
|---|---|
| Stress voltage(DC) | 100V～3,000V |
| Gate voltage(DC) | -30V～+30V（Option -45V～+45V） |
| Number of channels | Max.48ch |
| Temperature range | Max. +200℃（Option Max. +250℃） |