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Flash Memory Endurance Cycling System

The Flash Memory Endurance Cycling System is a monitored burn-in system that evaluates flash memory, FeRAM, and other nonvolatile memory.

With flash memory, it is possible for the tester to transfer test functions using the pattern generation function that enables generation of complex algorithms, bad block management function, and Vth distribution measurement function. This system was designed for expandability and flexibility to accommodate nonvolatile memory tests developed in the future, and it provides testing and inspection from nonvolatile memory R&D to mass production.

Applicable devices
Flash memory is rewritable and is a nonvolatile semiconductor memory that does not erase the data even if the power supply is turned off. While there are NAND and NOR flash memory, the demand for NAND flash memory has suddenly grown with the popularity of portable music players. (Pictured: NAND flash memory using 43 nm process technology, Toshiba Corporation, 16/32 GB)
Figure: Applicable devices
Features
  • High capacity and high speed processing of flash memory erase/write cycle test
  • Supports block management of NAND flash memory
  • Equipped with flexible pattern generator (ALPG)
  • Uses a multiple chamber system for easy temperature testing and evaluation with multiple standards
System block diagram
Figure: System block diagram
Specifications
  Model RBM-LCT-1212-
m23UUU
RBM-LCT-1212-
m23HUU
RBM-LCT-PST01
Chamber Variation High/Low Temp.
Chamber ×3
High Temp. Chamber×1
High/Low Temp.Chamber ×2
Chamber less
Operating temperature -55°C to 150°C High Temp. Chamber
+70°C to 150°C
High/Low Temp.
Chamber
-55°C to 150°C
Ambient Temp.
(Test Only)
Slot 12 12 1
Zone 12 12 1
System
performance
/Timing
generator
Cycle time / Resolution 100nS to 0.6mS / 10nS
Timing number 30
Clock frequency 16
Strobe 2
Clock resolution 10nS
DUT Power PS1、PS2 0.8V to 8.0V / 10A
PS3 - PS5 1V to 15V / 6A
PS6 -1V to -15V / 6A
Output accuracy ±(2%+50mV)