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Annealing at 400 to 500°C including dehydro-annealing in the film-forming process of low temperature polysicon TFT,activation annealing after ion doping and hydrogenated annealing. High temperature uniformity performance with a powerful air conditioning system and enhanced temperature heat-up and pull-down has dramatically improved processing capacity. Low oxygen concentration,below 10ppm (optional), makes the system usable for organic EL film-forming process before sealing.

Specifications (Example) processing glass size W370×L470,W600×L720,W730×L920 Temperature range +100 to 500°C Temperature uniformity ±3.0°C(at+300°C) ±4.0°C(at+400°C) ±5.0°C(at+500°C) Cleanliness class Class4(0.3μm) Internal size W750×H970×D990mm Outer size W1270×H2000×D2280mm